| The high power HVV1012-060 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1025 MHz to 1150 MHz.|Ruggedness|The HVV1012-060 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and operating voltage across the frequency band of operation. |
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| Download Specification Sheet (PDF) | |
| Key Attributes | Value |
| Frequency Range : Minimum Frequency | 1025 MHz |
| Frequency Range : Maximum Frequency | 1150 MHz |
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| Availability |
| Request Quote for Lead Time |
| Quantity | Unit Price |
| 1+ | $595.00 |
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| This product is available in the following countries: |
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