| The high power HVV0405-175 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the UHF-Band from 420MHz to 470MHz. The high voltage HVVFET™ technology produces over 175W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power. High voltage vertical technology is well suited for high power pulsed applications in the UHF band including weather and long range radar applications. |
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| Download Specification Sheet (PDF) | |
| Key Attributes | Value |
| Frequency Range : Minimum Frequency | 420 MHz |
| Frequency Range : Maximum Frequency | 470 MHz |
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| Availability |
| Request Quote for Lead Time |
| Quantity | Unit Price |
| 1+ | $895.00 |
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| This product is available in the following countries: |
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