| The high power HVV1012-250 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1025 MHz to 1150 MHz. The high voltage HVVFET™ technology produces over 250 W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power. High voltage vertical technology is well suited for high power pulsed applications in the L-Band including Airborne DME, IFF, TCAS and Mode-S applications. |
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| Download Specification Sheet (PDF) | |
| Key Attributes | Value |
| Frequency Range : Minimum Frequency | 1025 MHz |
| Frequency Range : Maximum Frequency | 1150 MHz |
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| Availability |
| Request Quote for Lead Time |
| Quantity | Unit Price |
| 1+ | $995.00 |
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| This product is available in the following countries: |
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