| The high power HVV1214-100 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1200MHz to 1400MHz. The high voltage HVVFET™ technology produces over 100W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power. High voltage vertical technology is well suited for high power pulsed applications in the L-Band including G-DME, A-DME, IFF, TCAS and Mode-S applications. |
|
| Download Specification Sheet (PDF) | |
| Key Attributes | Value |
| Frequency Range : Minimum Frequency | 1200 MHz |
| Frequency Range : Maximum Frequency | 1400 MHz |
|
|
| Availability |
| Request Quote for Lead Time |
| Quantity | Unit Price |
| 1+ | $695.00 |
|
|
| |
|
|
| This product is available in the following countries: |
|
|
|
|
|